Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition

被引：36

作者：

Gaskell, J. M.

Jones, A. C.

Aspinall, H. C.

Taylor, S.

Taechakumput, P.

Chalker, P. R. ^{[1
]}

Heys, P. N.

Odedra, R.

机构：

[1] Univ Liverpool, Dept Engn, Liverpool L69 3GH, Merseyside, England

[2] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England

[3] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[4] SAFC Hitech, Wirral CH62 3QF, Merseyside, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2784956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of lanthanum zirconium oxide, LaxZr1-xO2-delta (x=0.22,0.35,0.63), have been grown by liquid injection atomic layer deposition using [((PrCp)-Pr-i)(3)La] and [(MeCp)(2)ZrMe(OMe)] precursors. At lower La atomic fractions (x=0.22) films were stabilized in the cubic phase after annealing at 700 degrees C in air. At higher La atomic fractions (x>0.35), the films remained amorphous after annealing. The films deposited showed good dielectric properties with low hysteresis voltages and negligible flatband voltage shifts. The relative permittivity (kappa) ranged from 11 to 14 with leakage current densities at 1 MV cm(-1) in the range of 2.6x10(-6)-5.3x10(-7) A cm(-2).

引用

页数：3

共 15 条

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