Size anisotropy inhomogeneity effects in state-of-the-art quantum dot lasers

被引：4

作者：

Butler, I. M. E. ^{[1
,2
]}

Li, W. ^{[3
]}

Sobhani, S. A. ^{[1
]}

Babazadeh, N. ^{[1
]}

Ross, I. M. ^{[3
]}

Nishi, K. ^{[4
]}

Takemasa, K. ^{[4
]}

Sugawara, M. ^{[4
]}

Childs, D. T. D. ^{[1
]}

Hogg, R. A. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Queens Univ Belfast, Sch Math & Phys, Belfast BT7 1NN, Antrim, North Ireland

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 4DE, S Yorkshire, England

[4] QD Laser Inc, Kawasaki Ku, Keihin Bldg,1F,1-1 Minamiwataridacho, Kawasaki, Kanagawa 2100855, Japan

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

NARROW PHOTOLUMINESCENCE LINEWIDTH; MU-M; INDIUM COMPOSITION; THRESHOLD; TRANSMISSION; MODULATION; DEPENDENCE; EPITAXY;

D O I：

10.1063/1.5021774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a high angle annular dark field scanning transmission electron microscopy study of a self-assembled InAs-GaAs quantum dot (QD) laser sample providing insight into the microstructure of the QD ensemble. A size distribution anisotropy of the QDs is observed in the two orthogonal (110) planes, and this structural information is used to develop a density of states model for the QD ensemble which is shown to be in strong agreement with a range of optical spectroscopic measurements. This link between the micro-structure and optical properties allows routes to QD device simulation. We go on to discuss how changes to the micro-structure would affect the density of states and hence laser performance. Published by AIP Publishing.

引用

页数：5

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