Online degradation model based on process-stress accelerated test

被引：3

作者：

Guo Chun-Sheng ^{[1
]}

Wan Ning ^{[1
]}

Ma Wei-Dong ^{[1
]}

Xiong Cong ^{[1
]}

Zhang Guang-Chen ^{[1
]}

Feng Shi-Wei ^{[1
]}

机构：

[1] Beijng Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

来源：

ACTA PHYSICA SINICA | 2011年 / 60卷 / 12期

关键词：

process-stress accelerated test; parameter degradation; online measurement; RELIABILITY; TEMPERATURE;

D O I：

10.7498/aps.60.128501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An online degradation model is presented, in which is avoided the error in parameter degradation accelerated test, which is caused by temperature shock during parameter measurement. Through the measurement with avoiding the error parameter, the parameter degradation model can be more accurate. To demonstrate the application of the method, a kind of mature product, 3CG120, is tested in a temperature range of 150-230 degrees C under online process-stress. Then the error of lifetime is obtained by utilizing the online model to be about 6.5%, much less than that of the old model (23.2%).

引用

页数：5

共 9 条

[1] Sixty thousand hour light output reliability of AlGaInP light emitting diodes [J].

Grillot, Patrick N. ;

Krames, Michael R. ;

Zhao, Hanmin .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (04) :564-574

[2] Error correction of theory model of process stress accelerated test [J].

Guo Chun-Sheng ;

Shan Ni-Na ;

Feng Shi-Wei ;

Ma Wei-Dong .

ACTA PHYSICA SINICA, 2010, 59 (04) :2350-2355

[3] Reliability-extrapolation methodology of semiconductor laser diodes: Is a quick life test feasible? [J].

Huang, JS .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (01) :46-51

[4] Temperature and current dependences of reliability degradation of buried heterostructure semiconductor lasers [J].

Huang, JS .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (01) :150-154

[5]

Li Zhiguo, 2003, Chinese Journal of Semiconductors, V24, P856

[6] Reversible degradation of ohmic contacts on p-GaN for application in high-brightness LEDs [J].

Meneghini, Matteo ;

Trevisanello, Lorenzo-Roberto ;

Zehnder, Ulrich ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3245-3251

[7] TEMPERATURE-RAMP RESISTANCE ANALYSIS TO CHARACTERIZE ELECTROMIGRATION [J].

PASCO, RW ;

SCHWARZ, JA .

SOLID-STATE ELECTRONICS, 1983, 26 (05) :445-452

[8] The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics [J].

Su-Zhen, Luan ;

Hong-Xia, Liu ;

Ren-Xu, Jia .

ACTA PHYSICA SINICA, 2008, 57 (04) :2524-2528

[9]

[赵建印 Zhao Jianyin], 2005, [电子学报, Acta Electronica Sinica], V33, P378

← 1 →