Effect of bottom electrodes on nanoscale switching characteristics and piezoelectric response in polycrystalline BiFeO3 thin films

被引:40
作者
Yan, F. [1 ]
Zhu, T. J. [2 ]
Lai, M. O. [1 ]
Lu, L. [1 ]
机构
[1] Natl Univ Singapore, Dept Mech Engn, Singapore 117576, Singapore
[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
关键词
FERROELECTRIC PROPERTIES; HETEROSTRUCTURES; CAPACITORS; GROWTH;
D O I
10.1063/1.3651383
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the nanoscale switching characteristics and piezoelectric response based on polycrystalline BiFeO3 (BFO) thin films with different orientations deposited on different oxide bottom electrodes. The BFO film deposited on the LaNiO3 (LNO)-coated Si substrate shows a (001) preferred orientation and higher ferroelectric properties, while the BFO film grown on the SrRuO3 (SRO) buffered Si substrate shows a random orientation. The domain structures have been determined via piezoresponse force microscopy (PFM) for both films, predicting that the BFO film with the LNO bottom electrode has a larger piezoelectricity property corresponding to the ferroelastic domain. Through local switching spectroscopy measurements, the evidence of ferroelectric switching and the origin of the enhanced piezoresponse properties have been provided. A greatly improved piezoelectric response has been demonstrated using PFM that is 66.8 pm V-1 for the BFO with a SRO bottom electrode, while we obtain a value of 348.2 pm V-1 for the BFO with a LNO bottom electrode due to the increased density of the polarization vectors along the external electrical field. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651383]
引用
收藏
页数:6
相关论文
共 21 条
[1]  
BRIAN CC, 2007, NANOTECHNOLOGY, V18
[2]   Physics and Applications of Bismuth Ferrite [J].
Catalan, Gustau ;
Scott, James F. .
ADVANCED MATERIALS, 2009, 21 (24) :2463-2485
[3]   La and Nb codoped BiFeO3 multiferroic thin films on LaNiO3/Si and IrO2/Si substrates [J].
Cheng, Z. X. ;
Wang, X. L. ;
Kimura, H. ;
Ozawa, K. ;
Dou, S. X. .
APPLIED PHYSICS LETTERS, 2008, 92 (09)
[4]   Domain control in mulfiferroic BiFeO3 through substrate vicinality [J].
Chu, Ying-Hao ;
Cruz, Maria P. ;
Yang, Chan-Ho ;
Martin, Lane W. ;
Yang, Pei-Ling ;
Zhang, Jing-Xian ;
Lee, Kilho ;
Yu, Pu ;
Chen, Long-Qing ;
Ramesh, Ramamoorthy .
ADVANCED MATERIALS, 2007, 19 (18) :2662-+
[5]   Strain control of domain-wall stability in epitaxial BiFeO3 (110) films [J].
Cruz, M. P. ;
Chu, Y. H. ;
Zhang, J. X. ;
Yang, P. L. ;
Zavaliche, F. ;
He, Q. ;
Shafer, P. ;
Chen, L. Q. ;
Ramesh, R. .
PHYSICAL REVIEW LETTERS, 2007, 99 (21)
[6]   Large electric polarization and exchange bias in multiferroic BiFeO3 [J].
Dho, Joonghoe ;
Qi, Xiaoding ;
Kim, Hyunho ;
MacManus-Driscoll, Judith L. ;
Blamire, Mark G. .
ADVANCED MATERIALS, 2006, 18 (11) :1445-+
[7]   FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES [J].
EOM, CB ;
VANDOVER, RB ;
PHILLIPS, JM ;
WERDER, DJ ;
MARSHALL, JH ;
CHEN, CH ;
CAVA, RJ ;
FLEMING, RM ;
FORK, DK .
APPLIED PHYSICS LETTERS, 1993, 63 (18) :2570-2572
[8]   Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films [J].
Jang, Ho Won ;
Ortiz, Daniel ;
Baek, Seung-Hyub ;
Folkman, Chad M. ;
Das, Rasmi R. ;
Shafer, Padraic ;
Chen, Yanbin ;
Nelson, Christofer T. ;
Pan, Xiaoqing ;
Ramesh, Ramamoorthy ;
Eom, Chang-Beom .
ADVANCED MATERIALS, 2009, 21 (07) :817-+
[9]   Effects of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films [J].
Lian, L ;
Sottos, NR .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) :3941-3949
[10]   Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films [J].
Ma, Jing ;
Hu, Jiamian ;
Li, Zheng ;
Nan, Ce-Wen .
ADVANCED MATERIALS, 2011, 23 (09) :1062-1087