Nanoscale Observation of Time-Dependent Domain Wall Pinning as the Origin of Polarization Fatigue

被引:73
作者
Yang, Sang Mo [1 ]
Kim, Tae Heon [1 ]
Yoon, Jong-Gul [2 ]
Noh, Tae Won [1 ]
机构
[1] Seoul Natl Univ, Res Ctr Funct Interfaces, Dept Phys & Astron, Seoul 151747, South Korea
[2] Univ Suwon, Dept Phys, Hwaseong 445743, Gyunggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
ferroelectrics; fatigue; piezoresponse force microscopy; domain wall pinning; PB(ZR; TI)O-3; THIN-FILMS; FERROELECTRIC-FILMS; CAPACITORS; ELECTRODES; NUCLEATION; HETEROSTRUCTURES; SUPPRESSION; SCENARIOS; FUTURE; GROWTH;
D O I
10.1002/adfm.201102685
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The microscopic mechanism of polarization fatigue (i.e., a loss of switchable polarization under electrical cycling) remains one of the most important long-standing problems in ferroelectric communities. Although there are numerous proposed fatigue models, a consensus between the models and experimental results is not reached yet. By using modified-piezoresponse force microscopy, nanoscale domain switching dynamics are visualized for different fatigue stages in epitaxial PbZr0.4Ti0.6O3 capacitors. Systematic time-dependent studies of the domain nucleation and evolution reveal that domain wall pinning, rather than nucleation inhibition, is the primary origin of fatigue. In particular, the evolution of domain wall pinning process during electrical cycling, from the suppression of sideways domain growth in early fatigued stages to the blockage of forward domain growth in later stages, is directly observed. The pinning of forward growth results in a nucleation-limited polarization switching and a significant slowdown of the switching time in the severely fatigued samples. The direct nanoscale observation of domain nucleation and growth dynamics elucidates the importance of evolution of the domain wall pinning process in the fatigue of ferroelectric materials.
引用
收藏
页码:2310 / 2317
页数:8
相关论文
共 42 条
[1]   Ferroelectricity at the nanoscale: Local polarization in oxide thin films and heterostructures [J].
Ahn, CH ;
Rabe, KM ;
Triscone, JM .
SCIENCE, 2004, 303 (5657) :488-491
[2]   The Nature of Polarization Fatigue in BiFeO3 [J].
Baek, Seung-Hyub ;
Folkman, Chad M. ;
Park, Jae-Wan ;
Lee, Sanghan ;
Bark, Chung-Wung ;
Tybell, Thomas ;
Eom, Chang-Beom .
ADVANCED MATERIALS, 2011, 23 (14) :1621-+
[3]   Direct Observation of Capacitor Switching Using Planar Electrodes [J].
Balke, Nina ;
Gajek, Martin ;
Tagantsev, Alexander K. ;
Martin, Lane W. ;
Chu, Ying-Hao ;
Ramesh, Ramamoorthy ;
Kalinin, Sergei V. .
ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (20) :3466-3475
[4]   Electromechanical Imaging and Spectroscopy of Ferroelectric and Piezoelectric Materials: State of the Art and Prospects for the Future [J].
Balke, Nina ;
Bdikin, Igor ;
Kalinin, Sergei V. ;
Kholkin, Andrei L. .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2009, 92 (08) :1629-1647
[5]   Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films [J].
Bratkovsky, AM ;
Levanyuk, AP .
PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3177-3180
[6]   MODEL OF FERROELECTRIC FATIGUE DUE TO DEFECT/DOMAIN INTERACTIONS [J].
Brennan, Ciaran .
FERROELECTRICS, 1993, 150 (01) :199-208
[7]   Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors [J].
Colla, EL ;
Stolichnov, I ;
Bradely, PE ;
Setter, N .
APPLIED PHYSICS LETTERS, 2003, 82 (10) :1604-1606
[8]   Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin film capacitors with Pt electrodes [J].
Colla, EL ;
Hong, SB ;
Taylor, DV ;
Tagantsev, AK ;
Setter, N ;
No, K .
APPLIED PHYSICS LETTERS, 1998, 72 (21) :2763-2765
[9]   Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes [J].
Colla, EL ;
Taylor, DV ;
Tagantsev, AK ;
Setter, N .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2478-2480
[10]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130