Low Temperature and Low Phosphorus Electroless Nickel Plating

被引：1

作者：

Ma, LiGuo ^{[1
]}

Liu, He ^{[1
]}

Li, JuJun ^{[1
]}

He, YanFeng ^{[1
]}

机构：

[1] Changchun Univ Technol, Sch Chem Engn, Changchun 130012, Jilin, Peoples R China

来源：

FUNDAMENTAL OF CHEMICAL ENGINEERING, PTS 1-3 | 2011年 / 233-235卷

关键词：

Electroless nickel plating; Alkaline; Low temperature; Low phosphorus;

D O I：

10.4028/www.scientific.net/AMR.233-235.302

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Direct electroless nickel plating on n-Si(100) wafers in alkaline solutions was performed without any activation procedure in advance. The effect of pH and temperature on the size of deposited metal particles was examined. Moreover, The phosphorus contents of deposits were also analyzed by the energy disperse spectroscopy. The results indicated that the optimal reaction temperature was 60 degrees C and the optimal pH value was 10.0 with a plating rate of about 3.0 mu m/hr and the phosphorus content of about 3.6 wt%.

引用

页码：302 / 305

页数：4

共 4 条

[1]

[Anonymous], 1998, 1735998 GBT

[2] Electron-beam lithography with metal colloids: Direct writing of metallic nanostructures [J].

Lohau, J ;

Friedrichowski, S ;

Dumpich, G ;

Wassermann, EF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01) :77-79

[3] Electrochemical nanolithography using scanning probe microscopy: Fabrication of patterned metal structures on silicon substrates [J].

Sugimura, H ;

Nakagiri, N .

THIN SOLID FILMS, 1996, 281 :572-575

[4] Regular array of Si nanopillars fabricated using metal clusters [J].

Tada, T ;

Kanayama, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3934-3937

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