Suppression of Precipitates in the La2-xSrxCuO4 Films Grown on LaSrAlO4 Substrates by Introducing Homoepitaxial Layer

被引：3

作者：

Li, Bing-Sheng ^{[1
,2
,3
]}

Sawa, Akihito ^{[3
]}

Okamoto, Hiroshi ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778561, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 09期

关键词：

YBA2CU3O7-DELTA THIN-FILMS; PULSED-LASER DEPOSITION; SUPERCONDUCTIVITY; TEMPERATURE; TRANSITION; STRAIN; BA;

D O I：

10.1143/JJAP.50.093101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated impacts of a LaSrAlO4 (LSAO) homoepitaxial layer (HL) on the quality of La2-xSrxCuO4 (LSCO) films grown on single crystal LSAO (001) substrates by pulsed laser deposition. Introduction of the LSAO HL significantly suppressed the segregation of impurity phases in the LSCO films especially in a higher Sr-doping range (x > 0.20), leading to the improvement of the surface morphology. The suppression of impurity phases also enables us to obtain the desired stoichiometry of the LSCO films, which show the superconducting dome in the x-temperature phase diagram very similar to that of bulk samples. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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