Alkali metal-induced Si(111) √21 x √21 structure:: The Na case

被引：20
作者：
D'angelo, M
Konishi, M
Matsuda, I
Liu, C
Hasegawa, S
Okuda, T
Kinoshita, T
机构：
[1] Univ Tokyo, Sch Sci, Dept Phys, Tokyo 1130033, Japan
[2] Univ Tokyo, Inst Solid State Phys, Synchrotron Radiat Lab, Kashiwa, Chiba 2778581, Japan
来源：
SURFACE SCIENCE | 2005年 / 590卷 / 2-3期
关键词：
scanning tunneling microscopy; photoelectron spectroscopy; surface reconstructions; silicon; silver; sodium;
D O I：
10.1016/j.susc.2005.06.031
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the first scanning tunneling microscopy (STM) and core-level photoemission (CL-PES) studies of a root 21 x root 21 structure induced by sub-monolayer Na deposition on the Si(1 11) root 3 x root 3-Ag surface. In the filled-state STM images, five bright protrusions in the root 21 x root 21 unit cell are located on the Ag trimers of the root 3 x root 3-Ag structure. The Si 2p core-level photoemission decomposition shows that the surface-shifted component originated from the Si-trimer atoms in the root 3 x root 3-Ag surface splits into two for the root 21 x root 21 structure, which are attributed to the Si-trimer atoms in the root 21 x root 21 unit cell which are affected and unaffected by the Na adsorption. These results show strong similarities between the Na-induced root 21 x root 21 superstructure and the noble metal-induced ones, indicating a common atomic structure and formation mechanism. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：162 / 172
页数：11
相关论文
共 28 条
[1]   Asymmetric structure of the Si(111)-√3 x √3-Ag surface [J].
Aizawa, H ;
Tsukada, M ;
Sato, N ;
Hasegawa, S .
SURFACE SCIENCE, 1999, 429 (1-3) :L509-L514
[2]   First-principles study of Ag adatoms on the Si(111)-√3 x √3-Ag surface [J].
Aizawa, H ;
Tsukada, M .
PHYSICAL REVIEW B, 1999, 59 (16) :10923-10927
[3]   Fermi surfaces of surface states on Si(111)-Ag, Au [J].
Crain, JN ;
Altmann, KN ;
Bromberger, C ;
Himpsel, FJ .
PHYSICAL REVIEW B, 2002, 66 (20) :1-8
[4]   Complex behaviors at simple semiconductor and metal/semiconductor surfaces [J].
Davila, ME ;
Avila, J ;
Asensio, MC ;
Le Lay, G .
SURFACE REVIEW AND LETTERS, 2003, 10 (06) :981-1008
[5]   Electrical conduction via surface-state bands [J].
Hasegawa, S ;
Tong, X ;
Jiang, CS ;
Nakajima, Y ;
Nagao, T .
SURFACE SCIENCE, 1997, 386 (1-3) :322-327
[6]   Structures and electronic transport on silicon surfaces [J].
Hasegawa, S ;
Tong, X ;
Takeda, S ;
Sato, N ;
Nagao, T .
PROGRESS IN SURFACE SCIENCE, 1999, 60 (5-8) :89-257
[7]   Surface electronic transport on silicon:: donor- and acceptor-type adsorbates on Si(111)-√3 x √3-Ag substrate [J].
Hasegawa, S ;
Tsuchie, K ;
Toriyma, K ;
Tong, X ;
Nagao, T .
APPLIED SURFACE SCIENCE, 2000, 162 :42-47
[8]  
HUFNE RS, 1996, SPRINGER SERIES SOLI, V82
[9]  
Ichimiya A., 1994, Surface Review and Letters, V1, P1, DOI 10.1142/S0218625X94000023
[10]   root 21 x root 21 phase formed by Na adsorption on Si(111) root 3 x root 3-Ag and its electronic structure [J].
Konishi, Mitsuru ;
Matsuda, Iwao ;
Liu, Canhua ;
Morikawa, Harumo ;
Hasegawa, Shuji ;
Okuda, Taichi ;
Kinoshita, Toyohiko .
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 :107-112
123