Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance

被引：158

作者：

Kondow, M

Nakatsuka, S

Kitatani, T

Yazawa, Y

Okai, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 11期

关键词：

GaInNAs; long-wavelength-range laser diode; room temperature pulsed operation; high-temperature performance;

D O I：

10.1143/JJAP.35.5711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm(2), and the lasing wavelength was about 1.2 mu m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127K in the temperature range from 25 to 85 degrees C.

引用

页码：5711 / 5713

页数：3

共 4 条

[1] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[2]

KONDOW M, 1996, P MRS J S, P42

[3]

MOHRLE M, 1991, IEEE J QUANTUM ELECT, V27, P1804

[4] Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser [J].

Nakahara, K ;

Kondow, K ;

Kitatani, T ;

Yazawa, Y ;

Uomi, K .

ELECTRONICS LETTERS, 1996, 32 (17) :1585-1586

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