Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals

被引:7
|
作者
Xie, Xuejian [1 ,2 ]
Peng, Yan [1 ,2 ]
Zhang, Fusheng [1 ,2 ]
Wang, Rongkun [1 ,2 ]
Chen, Xiufang [1 ,2 ]
Hu, Xiaobo [1 ,2 ]
Xu, Xiangang [1 ,2 ]
机构
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Collaborat Innovat Ctr Global Energy Interconnect, Jinan 250061, Peoples R China
关键词
p-type SiC; Anharmonic effect; Raman spectra; Phonon property; TEMPERATURE-DEPENDENCE; SILICON-CARBIDE; NITRIDE FILMS; VAPOR GROWTH; 6H POLYTYPE; SCATTERING; DIAMOND;
D O I
10.1016/j.jallcom.2016.08.296
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Raman spectra of p-type 6H-SiC single crystals with different aluminum concentrations were investigated from 203 to 653 K. The temperature dependence of phonon modes were analyzed by considering the contributions from the thermal expansion and anharmonic effect. Results showed that the E-2(low) and E-2(high) modes were less dependent on the aluminum contents, while A(1)(LO) mode exhibited a strong dependence of aluminum contents. And The different feature of A(1)(LO) from E-2(low) and E-2(high) modes in heavily aluminum doped 6H-SiC indicated that the A(1)(LO) mode was dominated not only by the thermal expansion and anharmonic effect but also by the acceptor ionization effect. In addition, the phonon lifetimes were calculated via the energy-time uncertainty relation and the phonon decay mechanisms were illustrated. Furthermore, with temperature rising, the change of Raman scattering intensity was discussed. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:1033 / 1039
页数:7
相关论文
共 50 条
  • [41] Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles
    Jikuan Cheng
    Jiqiang Gao
    Junlin Liu
    Jianfeng Yang
    Xian Jiang
    Rui Guo
    Journal of Electronic Materials, 2008, 37 : 721 - 725
  • [42] Faster growth of 6H-SiC single crystals by a physical vapor transport technique with two crucibles
    Cheng, Jikuan
    Gao, Jiqiang
    Liu, Junlin
    Yang, Jianfeng
    Jiang, Xian
    Guo, Rui
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (05) : 721 - 725
  • [43] Dislocation glide-controlled room-temperature plasticity in 6H-SiC single crystals
    Kiani, S.
    Leung, K. W. K.
    Radmilovic, V.
    Minor, A. M.
    Yang, J. -M.
    Warner, D. H.
    Kodambaka, S.
    ACTA MATERIALIA, 2014, 80 : 400 - 406
  • [44] Ultrafast Carrier Dynamics in n-Type and Semi-Insulating 6H-SiC Crystals
    Nie Yao
    Wang Youyun
    Wu Xueqin
    Fang Yu
    LASER & OPTOELECTRONICS PROGRESS, 2019, 56 (06)
  • [45] Experimental Investigation of Piezoresistive Effect in p-Type 4H-SiC
    Tuan-Khoa Nguyen
    Hoang-Phuong Phan
    Toan Dinh
    Han, Jisheng
    Dimitrijev, Sima
    Tanner, Philip
    Foisal, Abu Riduan Md
    Zhu, Yong
    Nam-Trung Nguyen
    Dzung Viet Dao
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (07) : 955 - 958
  • [46] Hall Effect Characterization of α-Irradiated p-Type 4H-SiC
    Frye, Clint D.
    Murphy, John W.
    Shao, Qinghui
    Voss, Lars F.
    Harrison, Sara E.
    Edgar, James H.
    Nikolic, Rebecca J.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (03):
  • [47] Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC
    Mitani, Takeshi
    Nakashima, Shin-ichi
    Tomobe, Masaru
    Ji Shi-yang
    Kojima, Kazutoshi
    Okumura, Hajime
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 475 - 478
  • [48] Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
    Debelle, A.
    Thome, L.
    Dompoint, D.
    Boulle, A.
    Garrido, F.
    Jagielski, J.
    Chaussende, D.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (45)
  • [49] Effect of nitrogen ion implantation in semi insulating 6H-SiC and recrystallization probed by Raman scattering
    Kamalakkannan, K.
    Rajaraman, R.
    Sundaravel, B.
    Amarendra, G.
    Sivaji, K.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 457 : 24 - 29
  • [50] Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals
    Sivaji, K.
    Viswanathan, E.
    Selvakumar, S.
    Sankar, S.
    Kanjilal, D.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 587 : 733 - 738