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- [33] Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 881 - 884
- [35] On peculiarities of defect formation in 6H-SiC bulk single crystals grown by PVT method SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 43 - 47
- [39] Growth of undoped (vanadium-Free) semi-insulating 6H-SiC single crystals SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 35 - 38