Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals

被引:7
|
作者
Xie, Xuejian [1 ,2 ]
Peng, Yan [1 ,2 ]
Zhang, Fusheng [1 ,2 ]
Wang, Rongkun [1 ,2 ]
Chen, Xiufang [1 ,2 ]
Hu, Xiaobo [1 ,2 ]
Xu, Xiangang [1 ,2 ]
机构
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Collaborat Innovat Ctr Global Energy Interconnect, Jinan 250061, Peoples R China
关键词
p-type SiC; Anharmonic effect; Raman spectra; Phonon property; TEMPERATURE-DEPENDENCE; SILICON-CARBIDE; NITRIDE FILMS; VAPOR GROWTH; 6H POLYTYPE; SCATTERING; DIAMOND;
D O I
10.1016/j.jallcom.2016.08.296
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Raman spectra of p-type 6H-SiC single crystals with different aluminum concentrations were investigated from 203 to 653 K. The temperature dependence of phonon modes were analyzed by considering the contributions from the thermal expansion and anharmonic effect. Results showed that the E-2(low) and E-2(high) modes were less dependent on the aluminum contents, while A(1)(LO) mode exhibited a strong dependence of aluminum contents. And The different feature of A(1)(LO) from E-2(low) and E-2(high) modes in heavily aluminum doped 6H-SiC indicated that the A(1)(LO) mode was dominated not only by the thermal expansion and anharmonic effect but also by the acceptor ionization effect. In addition, the phonon lifetimes were calculated via the energy-time uncertainty relation and the phonon decay mechanisms were illustrated. Furthermore, with temperature rising, the change of Raman scattering intensity was discussed. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:1033 / 1039
页数:7
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