Preparation of Highly Textured ZnO Thin Films by Pulsed Electron Deposition

被引：5
|
作者：
Zhan, Peng [1 ]
Li, Zhengcao [1 ]
Zhang, Zhengjun [1 ]
机构：
[1] Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
MATERIALS TRANSACTIONS | 2011年 / 52卷 / 09期
基金：
中国国家自然科学基金;
关键词：
ZnO; thin film; pulsed electron deposition; SUBSTRATE-TEMPERATURE; ZINC; GROWTH; PHOTOLUMINESCENCE; ULTRAVIOLET; PARAMETERS; SAPPHIRE;
D O I：
10.2320/matertrans.M2011141
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pulsed electron deposition is a very promising means for growing high quality thin films even for complicated oxides. By investigating the influence of deposition parameters like the substrate temperature, the oxygen pressure in the chamber, as well as the pulse frequency and energy of the electrons on the growth of ZnO, the evolution of the [0002] orientation has been revealed and highly [0002] oriented ZnO thin films were obtained on Si (100) substrates at suitable conditions. [doi:10.2320/matertrans.M2011141]
引用
收藏
页码：1764 / 1767
页数：4
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