Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

被引：34

作者：

Kim, Woo-Hee ^{[1
,2
]}

Kim, Min-Kyu ^{[1
]}

Maeng, W. J. ^{[3
]}

Gatineau, Julien ^{[4
]}

Pallem, Venkat ^{[5
]}

Dussarrat, Christian ^{[5
]}

Noori, Atif ^{[6
]}

Thompson, David ^{[6
]}

Chu, Schubert ^{[6
]}

Kim, Hyungjun ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[3] Samsung Adv Inst Technol, Display Lab, Nongseo Dong 446712, Yongin, South Korea

[4] KK Air Liquide Labs, Tsukuba, Ibaraki 3004247, Japan

[5] Air Liquide Adv Technol US, Newark, DE 19702 USA

[6] Appl Mat Inc, Sunnyvale, CA 94085 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 08期

关键词：

CEO2; THIN-FILMS; ELECTRICAL-PROPERTIES; SILICON; OXIDE; SPECTROSCOPY; TEMPERATURE; METAL; ALD;

D O I：

10.1149/1.3594766

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

CeO(2) thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD). Novel Ce(iPrCp)(3) [tris(isopropyl-cyclopentadienyl) cerium] was used as a Ce precursor, which showed clean evaporation with no residue and good thermal stability. For PE-ALD, O(2) plasma was used as an oxidizing reactant. The PE-ALD process exhibited ALD mode with good self-saturation behavior and linear growth without any nucleation delay on Si substrate as a function of growth cycles. Additionally, it produced highly pure and nearly stoichiometric CeO(2) films with polycrystalline cubic phases. Electrical properties of Al/CeO(2)/p-Si capacitors were improved by O(2) annealing with reduction in interface state density (D(it)), hysteresis, effective oxide charge (Q(eff)) and leakage current density. These experimental results indicate that the PE-ALD CeO(2) using Ce(iPrCp)(3) precursor can be viable option as a future high-k material in the microelectronic industry. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594766] All rights reserved.

引用

页码：G169 / G172

页数：4

共 29 条

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