Anomalous ultrafast all-optical Hall effect in gapped graphene

被引:3
作者
Motlagh, S. Azar Oliaei [1 ]
Apalkov, Vadym [1 ,2 ]
机构
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Georgia State Univ, Ctr Nanoopt CeNO, Atlanta, GA 30303 USA
关键词
anomalous Hall effect; femtosecond pulse; graphene; laser pulse; pulse matter interaction; ultrafast process; VALLEY POLARIZATION; MOS2; ELECTRONS;
D O I
10.1515/nanoph-2021-0227
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We propose an ultrafast all-optical anomalous Hall effect in two-dimensional (2D) semiconductors of hexagonal symmetry such as gapped graphene (GG), transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN). To induce such an effect, the material is subjected to a sequence of two strong-field single-optical cycle pulses: A chiral pump pulse followed within a few femtoseconds by a probe pulse linearly polarized in the armchair direction of the 2D lattice. Due to the effect of topological resonance, the first (pump) pulse induces a large chirality (valley polarization) in the system, while the second pulse generates a femtosecond pulse of the anomalous Hall current. The proposed effect is fundamentally the fastest all-optical anomalous Hall effect possible in nature. It can be applied to ultrafast all-optical storage and processing of information, both classical and quantum.
引用
收藏
页码:3677 / 3685
页数:9
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