Static and dynamic characteristics of an MOS-Controlled high-power integrated thyristor

A theoretical analysis of physical processes in an MOS-controlled high-power integrated thyristor is presented. The design of this device and the effect of diffusion layer parameters on the I-V characteristic in the on state are considered. A rigorous calculation and estimates of the maximal anode current that can be turned off, which depends on the holding current of the thyristor structure shunted by an external MOS transistor, are made. This current is calculated as a function of the effective resistance, which includes the resistance of the MOS transistor channel and that of gate metallization. Simulation of the current decay shows that, as the MOS transistor is switched on, the current, after a delay, sharply (within several fractions of a microsecond) drops by about 90% and then goes on decreasing more smoothly. (c) 2005 Pleiades Publishing, Inc.