Synthesis and characterization of Ag-doped p-type ZnO nanowires

被引：21

作者：

Wang, Guoping ^{[1
]}

Chu, Sheng ^{[1
]}

Zhan, Ning ^{[1
]}

Zhou, Huimei ^{[1
]}

Liu, Jianlin ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 103卷 / 04期

关键词：

THIN-FILMS; ZINC-OXIDE; ARRAYS; PHOTOLUMINESCENCE; PHOTODIODES; DEPOSITION; DOPANT;

D O I：

10.1007/s00339-011-6390-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

P-type ZnO nanowires with silver (Ag) doping were synthesized via a chemical vapor deposition process. The incorporation of Ag was confirmed by selected-area energy-dispersive x-ray spectroscopy. The formation of acceptor states was demonstrated by temperature and excitation power-dependent photoluminescence measurements. Characterization of field-effect transistors using Ag-doped ZnO nanowires as channels showed p-type conductivity of the nanowires with a hole concentration of 4.9x10(17) cm(-3) and a carrier mobility of approximately 0.18 cm(2) V-1 s(-1).

引用

页码：951 / 954

页数：4

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