Voltage-modulated negative and positive magnetoresistance in La0.7Sr0.3MnO3/Si heterostructure

被引：9

作者：

Jin, K. X. ^{[1
]}

Zhao, S. G. ^{[2
]}

Tan, X. Y. ^{[1
]}

Chen, C. L. ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Dept Appl Phys, Xian 710072, Peoples R China

[2] Xian Univ Sci & Technol, Dept Basic Sci, Xian 710054, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 13期

关键词：

D O I：

10.1088/0022-3727/41/13/135003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetotransport properties have been investigated in a La0.7Sr0.3MnO3/Si heterostructure, which exhibits good rectifying behaviour and voltage-modulated negative and positive magnetoresistance effects. The application of magnetic fields induces an increase in the current at a low bias voltage and a decrease at a high bias. This is caused by the effect of the voltage on the ferromagnetic state in the La0.7Sr0.3MnO3 film at the interface by the field-direction-dependent lattice distortion at a high bias voltage.

引用

页数：4

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