Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

被引:117
作者
Shan, Qifeng [1 ,2 ]
Meyaard, David S. [1 ,2 ]
Dai, Qi [1 ,2 ]
Cho, Jaehee [1 ,2 ]
Schubert, E. Fred [1 ,2 ]
Son, Joong Kon [3 ]
Sone, Cheolsoo [3 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[3] Samsung LED, R&D Inst, Suwon 443743, South Korea
基金
美国国家科学基金会;
关键词
CAPACITANCE-VOLTAGE; CONDUCTION;
D O I
10.1063/1.3668104
中图分类号
O59 [应用物理学];
学科分类号
摘要
The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current-voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduction. At high temperature, the leakage current is explained by a thermally assisted multi-step tunneling model. The thermal activation energies (95-162 meV), extracted from the Arrhenius plot in the high-temperature range, indicate a thermally activated tunneling process. Additional room temperature capacitance-voltage measurements are performed to obtain information on the depletion width and doping concentration of the LED.(C) 2011 American Institute of Physics.[doi: 10.1063/1.3668104]
引用
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页数:3
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