Red to blue wavelength emission of N-polar (000(1)over-bar) lnGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

被引：49
作者：
Shojiki, Kanako [1 ]
Tanikawa, Tomoyuki [1 ,2 ]
Choi, Jung-Hun [1 ]
Kuboya, Shigeyuki [1 ]
Hanada, Takashi [1 ,2 ]
Katayama, Ryuji [1 ,2 ]
Matsuoka, Takashi [1 ,2 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 06期
关键词：
INGAN SOLAR-CELLS; QUANTUM-WELL; GAN; GAINN; MOVPE;
D O I：
10.7567/APEX.8.061005
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
N-polar (000 (1) over bar) (-c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for -c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633nm under a constant current of 20mA was achieved by changing the growth temperature of quantum wells from 880 to 790 degrees C. (C) 2015 The Japan Society of Applied Physics
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页数：4
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