The substrate strain mediated magnetotransport properties of surface states in topological insulators

被引：1
作者：
Ma, Ning [1 ,2 ]
Zhang, Shengli [2 ]
Liu, Daqing [3 ]
机构：
[1] Taiyuan Univ Technol, Dept Phys, MOE Key Lab Adv Transducers & Intelligent Control, Taiyuan 030024, Peoples R China
[2] Xi An Jiao Tong Univ, Dept Appl Phys, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Xian 710049, Peoples R China
[3] Changzhou Univ, Sch Math & Phys, Changzhou 213164, Peoples R China
来源：
PHYSICS LETTERS A | 2016年 / 380卷 / 42期
基金：
中国国家自然科学基金;
关键词：
Strain; Landau level; Magnetoconductivity; HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; ELECTRIC-FIELDS; GRAPHENE; OSCILLATIONS; TRANSPORT; BI2TE3; PHASE;
D O I：
10.1016/j.physleta.2016.08.054
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Recent experiments reveal that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). We further explore the strain effects on magnetotransport in HgTe at magnetic field. We find that the substrate strain associated with the surface index of carriers, can remove the surfaces degeneracy in Landau levels. This accordingly induces the well separated surface quantum Hall plateaus and Shubnikov-de Haas oscillations. These results can be used to generate and detect surface polarization, not only in HgTe but also in a broad class of TIs, which would be very great news for electronic applications of TIs. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：3564 / 3569
页数：6
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