Depletion-mode quantum dots in intrinsic silicon

被引：5

作者：

Amitonov, Sergey V. ^{[1
]}

Spruijtenburg, Paul C. ^{[1
]}

Vervoort, Max W. S. ^{[1
]}

van der Wiel, Wilfred G. ^{[1
]}

Zwanenburg, Floris A. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NanoElect Grp, POB 217, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 02期

关键词：

SPIN-BLOCKADE; PASSIVATION; COMPUTATION; INFORMATION; STATES; HOLES;

D O I：

10.1063/1.5002646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO2/Al2O3 dielectric stack to induce a 2DHG at the Si/SiO2 interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few-and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment and allows us to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO2/Al2O3 dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits. Published by AIP Publishing.

引用

页数：4

共 45 条

[11] Coherent Operations and Screening in Multielectron Spin Qubits
Higginbotham, A. P.
Kuemmeth, F.
Hanson, M. P.
Gossard, A. C.
Marcus, C. M.
[J]. PHYSICAL REVIEW LETTERS, 2014, 112 (02)
[12] On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
Hoex, B.
Gielis, J. J. H.
de Sanden, M. C. M. van
Kessels, W. M. M.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
[13] Spin blockade in hole quantum dots: Tuning exchange electrically and probing Zeeman interactions
Hung, Jo-Tzu
Marcellina, Elizabeth
Wang, Bin
Hamilton, Alexander R.
Culcer, Dimitrie
[J]. PHYSICAL REVIEW B, 2017, 95 (19)
[14] Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
Kim, J. -S.
Tyryshkin, A. M.
Lyon, S. A.
[J]. APPLIED PHYSICS LETTERS, 2017, 110 (12)
[15] The quantum internet
Kimble, H. J.
[J]. NATURE, 2008, 453 (7198) : 1023 - 1030
[16] Single hole transport in a silicon metal-oxide-semiconductor quantum dot
Li, R.
Hudson, F. E.
Dzurak, A. S.
Hamilton, A. R.
[J]. APPLIED PHYSICS LETTERS, 2013, 103 (16)
[17] Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
Li, Ruoyu
Hudson, Fay E.
Dzurak, Andrew S.
Hamilton, Alexander R.
[J]. NANO LETTERS, 2015, 15 (11) : 7314 - 7318
[18] Spin filling of valley-orbit states in a silicon quantum dot
Lim, W. H.
Yang, C. H.
Zwanenburg, F. A.
Dzurak, A. S.
[J]. NANOTECHNOLOGY, 2011, 22 (33)
[19] Observation of the single-electron regime in a highly tunable silicon quantum dot
Lim, W. H.
Zwanenburg, F. A.
Huebl, H.
Mottonen, M.
Chan, K. W.
Morello, A.
Dzurak, A. S.
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (24)
[20] Pauli-spin-blockade transport through a silicon double quantum dot
Liu, H. W.
Fujisawa, T.
Ono, Y.
Inokawa, H.
Fujiwara, A.
Takashina, K.
Hirayama, Y.
[J]. PHYSICAL REVIEW B, 2008, 77 (07):

← 1 2 3 4 5 →