Resonant tunneling in graphene microstructures

被引：9

作者：

Pereira, J. Milton, Jr. ^{[1
,2
]}

Vasilopoulos, P. ^{[3
]}

Peeters, F. M. ^{[1
]}

机构：

[1] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium

[2] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

[3] Concordia Univ, Dept Phys, Montreal, PQ H4B 1R6, Canada

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 3-4期

基金：

加拿大自然科学与工程研究理事会;

关键词：

graphene; tunneling; microstructures;

D O I：

10.1016/j.mejo.2007.07.099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results for the resonant electronic transmission through graphene-based single and double barriers as a function of the incident wave vector, the widths and heights of the barriers, and the separation between them. Resonant features in the transmission result from resonant electron states in the wells or hole states in the barriers and strongly influence the ballistic conductance of the structures. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：534 / 536

页数：3

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