Front side and backside OBIT mappings applied to single event transient testing

被引：4
作者：
Lewis, D [1 ]
Pouget, V
Beauchêne, T
Lapuyade, H
Fouillat, P
Touboul, A
Beaudoin, F
Perdu, P
机构：
[1] Univ Bordeaux 1, IXL, F-33405 Talence, France
[2] CNES, F-31401 Toulouse, France
来源：
MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 9-10期
关键词：
D O I：
10.1016/S0026-2714(01)00198-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new experimental set-up dedicated to front side and backside picosecond OBIC testing is presented. Applications for fundamental study of integrated circuits are presented. Front side and backside OBIC images of an analog integrated circuit show the potentiality and the suitability of this new equipment an methodology for laser testing of VLSI circuits. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1471 / 1476
页数：6
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