Charge carrier injection and transport associated with thermally generated cracks in a 6,13-bis(triisopropylsilylethynyl) pentacene thin-film transistor

被引：26
作者：
Bae, Jin-Hyuk [1 ]
Kim, Hyeok [2 ]
Horowitz, Gilles [2 ]
Lee, Sin-Doo [1 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn 32, Seoul 151600, South Korea
[2] Univ Paris 07, CNRS, ITODYS, F-75205 Paris, France
来源：
SOLID-STATE ELECTRONICS | 2011年 / 63卷 / 01期
关键词：
Crack; TIPS-pentacene; Post-thermal annealing; Carrier injection; Carrier transport; Interfacial resistance; FIELD-EFFECT TRANSISTORS; ELECTRICAL CHARACTERISTICS; DEPOSITION; MOBILITY; CRYSTAL;
D O I：
10.1016/j.sse.2011.05.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe how the charge carrier injection and transport are influenced by thermal cracks in a 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene film in terms of the contact resistance and the channel resistance in a TIPS pentacene thin-film transistor (TFT). Through a post-thermal annealing (PTA) process at a certain temperature T, the high structural order of TIPS-pentacene molecules is produced without thermal cracks, the carrier mobility of the TIPS pentacene TFT is maximized, and both the contact resistance and the channel resistance are minimized. Our quantitative description of the relationship between the PTA treatment and the interfacial resistance behavior would provide a useful basis for understanding the thermal stability and the electrical performance of a solution-processed organic TET. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：163 / 166
页数：4
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