Modeling of the electrical derivative characteristic of InGaAsP multiple-quantum-well lasers

被引：0
|
作者：
Champagne, A [1 ]
Maciejko, R [1 ]
Makino, T [1 ]
机构：
[1] Ecole Polytech, Dept Engn Phys, Optoelect Lab, Montreal, PQ H3C 3A7, Canada
来源：
APPLICATIONS OF PHOTONIC TECHNOLOGY 3 | 1998年 / 3491卷
关键词：
semiconductor laser; quantum well; optical gain; drift-diffusion; thermionic emission; simulation;
D O I：
10.1117/12.328731
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive semiconductor laser model is used to analyze the first electrical derivative characteristic of long wavelength MQW semiconductor lasers. It is found that the charge neutrality condition and the continuity of the quasi-Fermi levels, usually assumed in the rate equation approach, need not be respected. The first electrical derivative characteristics of abrupt and GRINSCH MQW structures are presented. The effects of doping in the active region on the optical gain and on the first electrical derivative characteristic are also studied.
引用
收藏
页码：236 / 241
页数：6
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