Noise in SOI MOSFETs and gate-all around transistors

被引：0

作者：

Iñiguez, B ^{[1
]}

Lázaro, A ^{[1
]}

Hamid, HA ^{[1
]}

Pailloncy, G ^{[1
]}

Dambrine, G ^{[1
]}

Danneville, F ^{[1
]}

机构：

[1] Univ Rovira & Virgili, Dept Elect Elect & Automat Engn, Tarragona 43007, Spain

来源：

Noise and Fluctuations | 2005年 / 780卷

关键词：

compact noise modeling; SOI MOSFETs; double-gate MOSFETs; high-frequency operation;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

In this paper, we discuss the RF noise properties of SOI MOSFETs, and we present a suitable model for nanoscale fully-depleted SOI MOSFETs, which is derived from a compact quasi-static SOI MOSFET model by properly extending it to the high frequency regime, using the active line approach and taking into account all the extrinsic parameters. We have used a physically-based noise modeling which takes account diffusion related fluctuations; this allows to study fundamental noise parameters close to the current noise sources and to discuss the downscaling of these noise sources. Finally, we have extended our study to Double-Gate devices, using as a basis a quasi-static model recently presented.

引用

页码：269 / 274

页数：6

共 8 条

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