Thickness-Dependent Energy-Level Alignment at the Organic-Organic Interface Induced by Templated Gap States

被引:3
作者
Hagenlocher, Jan [1 ]
Broch, Katharina [1 ]
Zwadlo, Matthias [1 ]
Lepple, Daniel [1 ]
Rawle, Jonathan [2 ]
Carla, Francesco [1 ,2 ]
Kera, Satoshi [3 ]
Schreiber, Frank
Hinderhofer, Alexander [1 ]
机构
[1] Univ Tubingen, Inst Appl Phys, D-72726 Tubingen, Germany
[2] Diamond Light Source, Didcot OX11 0DE, Oxon, England
[3] Inst Mol Sci, Dept Photomol Sci, Okazaki, Aichi 4448585, Japan
基金
日本学术振兴会;
关键词
energy-level alignment; gap states; organic semiconductors; structural defects; MOLECULAR-BEAM DEPOSITION; ORIENTATION; FILMS;
D O I
10.1002/admi.202101382
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Planar organic heterostructures are widely explored and employed in photovoltaic cells, light-emitting diodes, and bilayer field-effect transistors. An important role for device performance plays the energy level alignment at the inorganic-organic and organic-organic interfaces. In this work, incremental ultraviolet photoelectron spectroscopy measurements and real-time X-ray scattering experiments are used to thoroughly investigate the thickness-dependent electronic and structural properties of a perfluoropentacene (PFP)-on-[6]phenacene heterostructure. For both materials an incremental increase of the material work function (positive interface dipole) is found. For [6]phenacene, this can be assigned to a thickness-dependent change of molecular arrangement evident from a change of the unit cell volume and a consequential alteration of the ionization energy. In the case of PFP the interface dipole stems from charge transfer from the substrate into unoccupied molecular orbitals resulting in an electrostatic potential on the surface. The magnitude of this potential can be correlated with an increased gap state density resulting from templated structural defects mediated by the bottom layer.
引用
收藏
页数:7
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