Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains

被引：5

作者：

Wu, Wangran ^{[1
]}

Yin, Liwei ^{[1
]}

Zhu, Siyu ^{[1
]}

Tang, Pengyu ^{[1
]}

Yang, Guangan ^{[1
]}

Liu, Siyang ^{[1
]}

Sun, Weifeng ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Engn, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Strain; MOSFET; Uniaxial strain; Silicon; Tensile strain; Piezoresistance; Logic gates; Mechanical strain; piezoresistance coefficients; split-gate trench (SGT) power MOSFETs; PERFORMANCE; TRANSISTOR; DESIGN; IGBT;

D O I：

10.1109/TED.2022.3143490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we have comprehensively investigated the electrical properties of split-gate trench (SGT) power MOSFETs under mechanical strains. The static and dynamic electrical properties of SGT power MOSFETs under both uniaxial and biaxial strains are examined thoroughly. It is found that both uniaxial and biaxial compressive strains improve the drain current ( $I_{{d}}$ ), while uniaxial and biaxial tensile strains do the opposite. The influence of strain is correlated with drain voltage ( $V_{{d}}$ ), and biaxial strains are slightly more effective than uniaxial strains. The mechanical strains do not change the threshold voltage ( $V_{{th}}$ ), breakdown voltage (BV), capacitances, and switching characteristics. The piezoresistance coefficients of the SGT power MOSFETs are evaluated. It is also proved that both biaxial and uniaxial compressive strains can effectively decrease the figure-of-merit (FOM) of SGT power MOSFETs.

引用

页码：1191 / 1195

页数：5

共 26 条

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Baliga B.J., 2008, Fundamentals of Power Semiconductor Devices, P399

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