A 59-66 GHz Highly Stable Millimeter Wave Amplifier in 130 nm CMOS Technology

被引：11

作者：

Fahimnia, Mehrdad ^{[1
]}

Mohammad-Taheri, Mahmoud ^{[2
]}

Wang, Ying ^{[3
]}

Yu, Ming ^{[4
]}

Safavi-Naeini, Safieddin ^{[1
]}

机构：

[1] Univ Waterloo, Dept ECE, Waterloo, ON N2L 3G1, Canada

[2] Univ Tehran, Dept ECE, Tehran, Iran

[3] Univ Ontario, Fac Engn & Appl Sci, Inst Technol, Oshawa, ON L1H 7K4, Canada

[4] COMDEV Ltd, Cambridge, ON N1R 7H6, Canada

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 06期

关键词：

CMOS; low noise amplifier (LNA); microstrip line; microwave/millimeter wave integrated circuit; stability;

D O I：

10.1109/LMWC.2011.2141977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and fabrication of four-stage cascaded mm-wave low noise amplifiers (LNAs) in a 130 nm CMOS technology are presented. The simultaneous high stability factor and low noise figure are obtained using proper inductors in both gate and source of the transistor. Measured gain of 14.7 dB with a 7 GHz bandwidth has been achieved. The larger inductors are realized with microstrip lines to improve the performance of the LNA and minimize the circuit size.

引用

页码：320 / 322

页数：3

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