In situ threshold photoemission yields correlated to surface reconstructions of InAs (001)

被引：4
作者：
Zinck, JJ
Ross, RS
Owen, JHG
Barvosa-Carter, W
Grosse, F
Ratsch, C
机构：
[1] HRL Labs LLC, Malibu, CA 90265 USA
[2] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 15期
关键词：
D O I：
10.1063/1.1406552
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Threshold photoemission yields for As and In terminated reconstructions of InAs (001) are measured in situ and the variation of the photoyield is correlated with the surface stoichiometry. A significant excess in the measured photoelectron yield is found for the In terminated surfaces. These results are compared to a semiempirical model based on density-functional theory calculations of the surface local densities of states for the As terminated beta2-(2x4) and newly predicted zeta-(4x2) reconstructions. The calculations are in good agreement with the measured trends, and provide a basis for the interpretation of threshold photoemission sensor signatures. (C) 2001 American Institute of Physics.
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页码：2354 / 2356
页数：3
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