Low power interference-robust UWB low noise amplifier in 0.18-μm CMOS technology

被引：0
|
作者：
Youssef, Ahmed A. [1 ]
Haslett, James W. [1 ]
机构：
[1] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB T2N 1N4, Canada
来源：
2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a very low power Low Noise Amplifier (LNA) operating from 3.1 GHz to 8 GHz for OFDM-UWB systems. The LNA is intended to cover groups 1 and 3 while filtering out group 2, whose spectrum is shared with WLAN signals representing troublesome interference. By utilizing both nMOS and pMOS transistors to boost the transconductance, the LNA draws only 1.5 mA from a 1.5 V supply. The LNA IC has been realized in 0.18-mu m CMOS technology from TSMC.
引用
收藏
页码：816 / 819
页数：4
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