Gettering of iron in CZ-silicon by polysilicon layer

被引：5

作者：

Haarahiltunen, A. ^{[1
]}

Yli-Koski, M. ^{[1
]}

Talvitie, H. ^{[1
]}

Vahanissi, V. ^{[1
]}

Lindroos, J. ^{[1
]}

Savin, H. ^{[1
]}

机构：

[1] Aalto Univ, Sch Sci & Technol, Dept Micro & Nanosci, Aalto 00076, Finland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3 | 2011年 / 8卷 / 03期

关键词：

iron; gettering; polysilicon;

D O I：

10.1002/pssc.201000194

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied iron gettering in intentionally iron contaminated Czochralski silicon wafers with a polysilicon layer. We have compared the gettering effect of the polylayer with internal gettering during a slow cooling from a high temperature. The experimental results show that the gettering efficiency of the polysilicon layer is stronger than internal gettering by bulk micro defects. In addition, the results reveal that after iron contamination and following surface cleaning, the polysilicon layer remains as a significant contamination source compared to a bare silicon surface. We also suggest a model for polysilicon gettering, which we use to analyze the dominant gettering mechanism under various gettering conditions. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：751 / 754

页数：4

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