Preparation of aluminium-doped ZnO films by helicon-wave excited plasma sputtering

被引：0

作者：

Yamaki, Y ^{[1
]}

Yamaya, K ^{[1
]}

Araya, H ^{[1
]}

Nakanishi, H ^{[1
]}

Chichibu, S ^{[1
]}

机构：

[1] Sci Univ Tokyo, Fac Sci & Technol, Noda, Chiba 2788510, Japan

来源：

BLUE LASER AND LIGHT EMITTING DIODES II | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Predominantly c[0001]-axis oriented aluminium-doped or undoped ZnO thin films were deposited using the helicon-wave excited plasma (HWP) as a sputtering source. The ZnO:Al thin films grown on soda-lime glass substrates exhibited narrow (0002) x-ray diffraction (XRD) peak with full width at half maximum (FWHM) of 0.29 deg. The ZnO:Al thin film deposited at 300 degrees C showed low resistivity of 5 x 10-4 Omega . cm without any additional annealings. Moreover, high optical transmittance greater than 85% was achieved in the visible spectral wavelengths. The HWP-sputtering method is expected as one of the versatile techniques for the preparation of semiconductor thin films.

引用

页码：48 / 51

页数：4

共 50 条

[21] Capacitive, inductive and helicon-wave modes of operation of a helicon plasma source
Ellingboe, AR
Boswell, RW
PHYSICS OF PLASMAS, 1996, 3 (07) : 2797 - 2804
[22] Capacitive, inductive and helicon-wave modes of operation of a helicon plasma source
Phys Plasmas, 7 (2797):
[23] Oxynitridation of silicon using helicon-wave excited and inductively-coupled nitrogen plasma
Okamoto, Y
Kimura, S
Ikoma, B
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (02): : 805 - 812
[24] Oxidation of GaAs using helicon-wave excited nitrogen-oxygen-argon plasma
Wada, S
Kasahara, F
Hara, A
Ikoma, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (4B): : L427 - L430
[25] Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO
Koyama, T
Chichibu, SF
JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 7856 - 7861
[26] Helicon-wave-excited plasma sputtering deposition of CuAlO2 thin films
Takahata, Satoru
Imao, Takashi
Nakanishi, Hisayuki
Sugiyama, Mutsumi
Chichibu, Shigefusa F.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3101 - +
[27] Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO
Chichibu, S.F. (optoelec@bk.tsukuba.ac.jp), 1600, American Institute of Physics Inc. (95):
[28] Aluminium-doped ZnO films by a modified chemical vapor deposition technique
Pung, S. Y.
Choy, K. L.
NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS, 2009, : 212 - 215
[29] Development of a compact divertor simulator excited by helicon-wave discharge
Aramaki, M
Kato, K
Goto, M
Muto, S
Morita, S
Sasaki, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 1164 - 1165
[30] THE TEMPORAL HELICON-WAVE ECHO IN AN INHOMOGENEOUS MAGNETIZED PLASMA
FEDUTENKO, E
LAPSHIN, V
PHYSICA SCRIPTA, 1992, 45 (04): : 364 - 367

← 1 2 3 4 5 →