Characterization of Mg-Doped AlInN annealed in nitrogen and oxygen ambients

被引：4

作者：

Cheng, A. T. ^{[1
,2
]}

Su, Y. K. ^{[1
,2
]}

Lai, W. C. ^{[3
]}

Chen, Y. Z. ^{[1
,2
]}

Kuo, S. Y. ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 08期

关键词：

metalorganic chemical vapor deposition; AlInN; postgrowth thermal treatment; lattice mismatch;

D O I：

10.1007/s11664-008-0496-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mg-doped AlInN grown by metalorganic chemical vapor deposition (MOCVD) was demonstrated using the postgrowth thermal treatment in nitrogen and oxygen ambients. High-resolution x-ray diffraction (HRXRD) measurements showed that the crystalline quality of AlInN depends on the indium content, which is attributed to the effect of the lattice mismatch between AlInN and GaN. Interestingly, the formation of rod-shaped AlInN, which possibly resulted from the oxidation process, was observed after the postgrowth thermal treatment in the oxygen ambient. Furthermore, an InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with an AlInN cladding layer was also fabricated. We believe that Mg-doped AlInN, nearly lattice matched to GaN, could play an important role for the further development of lattice-matched AlInN/GaN device applications.

引用

页码：1070 / 1075

页数：6

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