Prediction and Process Control Technique of Wafer Warpage for Advanced Trench Field Plate Power MOSFETs

被引：1

作者：

Kato, Hiroaki ^{[1
]}

Nishiguchi, Toshifumi ^{[1
]}

Shimomura, Saya ^{[1
]}

Miyashita, Katsura ^{[1
]}

Kobayashi, Kenya ^{[1
]}

机构：

[1] Toshiba Elect Devices & Storage Corp, Nomi, Ishikawa, Japan

来源：

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年

关键词：

Field-plate; MOSFET; Wafer warpage;

D O I：

10.1109/EDTM53872.2022.9798171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Trench Field-Plate (FP) MOSFET structure improves device characteristics. It is known, however, that trench FP-MOSFET causes wafer warpage in manufacturing process and causes wafer transfer errors in manufacturing equipment. We developed a stress-simulation model and predicted the wafer warpage change in a newly designed FP-MOSFET. By using the prediction, we could control the wafer warpage through the whole process. Moreover, we found a correlation between a trench angle and the wafer warpage after a field plate oxidation. The correlation is applicable to quality control for the trench angle in a wafer fab.

引用

页码：27 / 29

页数：3

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