Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide

被引：37

作者：

Chaisakul, Papichaya ^{[1
]}

Marris-Morini, Delphine ^{[1
]}

Isella, Giovanni ^{[2
]}

Chrastina, Daniel ^{[2
]}

Izard, Nicolas ^{[1
]}

Le Roux, Xavier ^{[1
]}

Edmond, Samson ^{[1
]}

Coudevylle, Jean-Rene ^{[1
]}

Vivien, Laurent ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Politecn Milan, L NESS, Dipartimento Fis, I-22100 Como, Italy

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 14期

关键词：

electroluminescence; Ge-Si alloys; integrated optics; optical materials; optical waveguides; quantum wells; OPTICAL GAIN; GE; SI; SILICON; DEPENDENCE;

D O I：

10.1063/1.3647572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report room temperature direct gap electroluminescence (EL) from a GeSi0.15Ge0.85 multiple quantum well (MQW) waveguide. The excitonic direct gap transition and the dependence of the EL intensity on the injection currents and temperature are clearly observed. EL from the Ge/SiGe MQWs is shown to have a transverse-electric polarization. These results demonstrate the strong potential of the Ge/Si0.15Ge0.85 MQWs in terms of the realization of a monolithically integrated light source on the Si platform. (C) 2011 American Institute of Physics. [doi:10.1063/1.3647572]

引用

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