Te-doping of self-catalyzed GaAs nanowires

被引：26

作者：

Suomalainen, S. ^{[1
]}

Hakkarainen, T. V. ^{[1
]}

Salminen, T. ^{[1
]}

Koskinen, R. ^{[1
]}

Honkanen, M. ^{[2
]}

Luna, E. ^{[3
]}

Guina, Mircea ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FI-33101 Tampere, Finland

[2] Tampere Univ Technol, Dept Mat Sci, FI-33101 Tampere, Finland

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 01期

基金：

芬兰科学院;

关键词：

III-V NANOWIRES; TWINNING SUPERLATTICES; GROWTH; MORPHOLOGY; SILICON; MECHANISM; AU;

D O I：

10.1063/1.4926494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy and high-resolution transmission electron microscopy. The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy. (C) 2015 AIP Publishing LLC.

引用

页数：4

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