Electrical and Optical Properties of Indium and Aluminum Doped Zinc Oxide Films Prepared by RF Magnetron Sputtering

被引：0

作者：

Yan, Luting ^{[1
]}

Rath, J. K. ^{[2
]}

Schropp, R. E. I. ^{[2
]}

机构：

[1] Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China

[2] Univ Utrecht, Debye Inst Nanomat Sci, NL-3508 TA Utrecht, Netherlands

来源：

ADVANCED ENGINEERING MATERIALS, PTS 1-3 | 2011年 / 194-196卷

基金：

中国国家自然科学基金;

关键词：

Sputtering Deposition; ZnO; Resistivity; Transmittance;

D O I：

10.4028/www.scientific.net/AMR.194-196.2272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO: In (IZO, 10wt % In2O3) and ZnO: Al (AZO, 1wt % Al2O3) films were deposited on Corning glass substrates by RF magnetron sputtering. The samples were either prepared on unheated substrates and post annealed in N-2 at different temperatures, or prepared at elevated temperatures. Electrical, optical and structural properties were investigated as a function of deposition temperature and annealing temperature. Increasing the substrate heater temperature would lead to a decline in the electrical conductivity of IZO films, while AZO films showed unchanged performance in the substrate heater temperature range of 150 - 300 degrees C. Post annealing appears to be an effective way to improve the electrical properties of both IZO and AZO films without sacrificing transparency. In this work, AZO films have higher conductivity and light transmission than IZO films.

引用

页码：2272 / +

页数：2