Formation of a-Si:H and a-Si1-xCx:H nanowires by Ag-assisted electroless etching in aqueous HF/AgNO3 solution

被引：19

作者：

Douani, Rachida ^{[2
]}

Piret, Gaelle ^{[1
]}

Hadjersi, Toufik ^{[3
]}

Chazalviel, Jean-Noel ^{[1
]}

Solomon, Ionel ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[2] Univ Mouloud Mammeri, Fac Sci, Tizi Ouzou, Algeria

[3] UDTS, Algiers, Algeria

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 16期

关键词：

Silicon; Silicon carbide; Nanowires; Electroless chemical etching; Amorphous alloys; Porous silicon; Scanning Electron Microscopy; SILICON-NANOWIRE; CRYSTALLINE SILICON; ARRAYS; NANOPARTICLES; FABRICATION; MECHANISM; SURFACE;

D O I：

10.1016/j.tsf.2011.02.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of hydrogenated amorphous silicon-carbon alloy (a-Si1-xCx:H) nanowires is studied for different carbon concentrations (0-7%) by using Ag-assisted electroless etching of the thin a-Si1-xCx:H films deposited by plasma-enhanced chemical vapour deposition from silane/methane gas mixtures. The nanowires morphologies (length, density, ...), studied by scanning electron microscopy, strongly depend on the concentration of the etchant (aqueous solution of hydrofluoric acid and silver nitrate), the etching time, and the carbon concentration of the deposited layer. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5383 / 5387

页数：5

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