Density distribution of a two-dimensional electron gas in a semiconducting heterostructure with a periodic gate electrode

被引：2

作者：

Morozov, YA ^{[1
]}

Popov, VV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Saratov Branch, Moscow 117901, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Density Distribution; Potential Bias; Distribution Profile; Electron Density Distribution; Gate Electrode;

D O I：

10.1134/1.1262359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calculations are made of the electron density distribution profiles in a layer of two-dimensional electron gas in a semiconducting heterostructure when reference and reverse potential biases are applied simultaneously to neighboring stripes of a periodic gate electrode. It is shown that for the structure parameters used experimentally the density distribution profile differs appreciably from rectangular and from sinusoidal. (C) 1999 American Institute of Physics. [S1063-7850(99)00601-1].

引用

页码：15 / 16

页数：2

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