Physics-based compact model for the EMCON p-i-n diode using MATLAB and Simulink

被引：2

作者：

Xue, Peng ^{[1
]}

Fu, Guicui ^{[1
]}

Zhang, Dong ^{[1
]}

机构：

[1] Beihang Univ, Sch Reliabil & Syst Engn, Beijing, Peoples R China

来源：

IET POWER ELECTRONICS | 2016年 / 9卷 / 12期

关键词：

p-i-n diodes; semiconductor device models; mathematics computing; electronic engineering computing; Fourier analysis; parameter extraction method; reverse recovery; N-base; depletion behaviour; deep field stop layer; ADE; ambipolar diffusion equation; one-dimensional Fourier-based solution; emitter controlled p-i-n diode; Simulink; Matlab; EMCON p-i-n diode; physics-based compact model; POWER SEMICONDUCTOR-DEVICES; GATE BIPOLAR-TRANSISTOR; HIGH-VOLTAGE DIODES; PARAMETER EXTRACTION; DYNAMIC AVALANCHE; BUFFER STRUCTURES; REVERSE RECOVERY; LOCAL LIFETIME; SPICE MODEL; IGBT;

D O I：

10.1049/iet-pel.2015.0718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a physics-based model for emitter controlled (EMCON) p-i-n diode is proposed. The model is based on the one-dimensional Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The ADE is solved for all injection levels based on the design concepts of EMCON diode. The deep field stop layer utilised in the EMCON diode is also considered in the solution. Moreover, the depletion behaviour in the N-base during reverse recovery is redescribed. To be self-contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode are used to validate the proposed model. The simulation results are compared with experiment waveforms and good agreement is obtained.

引用

页码：2416 / 2424

页数：9

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