Lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser

被引：69

作者：

Someya, T

Tachibana, K

Lee, J

Kamiya, T

Arakawa, Y

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

[2] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 12A期

关键词：

GaN; InGaN; MOCVD; vertical cavity surface emitting laser; photoluminescence;

D O I：

10.1143/JJAP.37.L1424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lasing action in an In0.1Ga0.9N vertical cavity surface emitting laser was successfully achieved, for the first time, at a wavelength of 381 nm. The 3 lambda vertical cavity comprising an In0.1Ga0.9N active region was grown on a GaN/Al0.34Ga0.66N quarter-wave reflector by metal organic chemical vapor deposition (MOCVD), and covered with a TiO2/SiO2 reflector by electron-beam evaporation. The laser was operated at 77 K under optical excitation, We have observed a significant narrowing of the emission spectrum from 2.5 nm below the threshold to 0.1 nm (resolution limit) above the threshold, which is a clear signature of lasing action.

引用

页码：L1424 / L1426

页数：3

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