Lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser

被引:69
|
作者
Someya, T
Tachibana, K
Lee, J
Kamiya, T
Arakawa, Y
机构
[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan
[2] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 12A期
关键词
GaN; InGaN; MOCVD; vertical cavity surface emitting laser; photoluminescence;
D O I
10.1143/JJAP.37.L1424
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lasing action in an In0.1Ga0.9N vertical cavity surface emitting laser was successfully achieved, for the first time, at a wavelength of 381 nm. The 3 lambda vertical cavity comprising an In0.1Ga0.9N active region was grown on a GaN/Al0.34Ga0.66N quarter-wave reflector by metal organic chemical vapor deposition (MOCVD), and covered with a TiO2/SiO2 reflector by electron-beam evaporation. The laser was operated at 77 K under optical excitation, We have observed a significant narrowing of the emission spectrum from 2.5 nm below the threshold to 0.1 nm (resolution limit) above the threshold, which is a clear signature of lasing action.
引用
收藏
页码:L1424 / L1426
页数:3
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