Synthesis of tin oxides SnO2-x in the entire composition range (x=0 to 1) by ion-beam sputter-deposition

被引：29
作者：
Becker, Martin [1 ]
Polity, Angelika [1 ]
Klar, Peter J. [1 ]
Meyer, Bruno K. [1 ]
机构：
[1] Univ Giessen, Phys Inst 1, Giessen, Germany
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 05期
关键词：
ion beam sputter deposition; tin oxides; intermediate oxides; thin films; compositional range; characterization; X-RAY-DIFFRACTION; THIN-FILMS; OXIDATION; GROWTH; SN2O3;
D O I：
10.1002/pssr.201510058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion-beam sputter-deposition (IBSD) was used to reactively deposit tin oxide crystalline films at oxygen fluxes of 3-15 sccm and at substrate temperatures of 100-600 degrees C. Analysing the samples by X-ray diffraction and Raman spectroscopy yields a map of the crystalline structures in dependence on the growth parameters. In addition to SnO2, pure SnO films of high quality and an intermediate phase such as Sn2O3 or Sn3O4 can be reproducibly obtained. Thus, IBSD is, to our knowledge, the only thin-film deposition technique verified yet to reliably produce samples in the entire composition range of tin oxides. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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收藏
页码：326 / 330
页数：5
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