A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities

被引：6

作者：

Ashton, James P. ^{[1
]}

Moxim, Stephen J. ^{[2
]}

Purcell, Ashton D. ^{[2
]}

Lenahan, Patrick M. ^{[2
]}

Ryan, Jason T. ^{[1
]}

机构：

[1] NIST, Alternat Comp Grp, Gaithersburg, MD 20899 USA

[2] Penn State Univ, Engn Sci & Mech Dept, University Pk, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2021年 / 130卷 / 13期

关键词：

SPIN-DEPENDENT RECOMBINATION; ZERO-FIELD MAGNETORESISTANCE; SILICON;

D O I：

10.1063/5.0064397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal-oxide-semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects. In previous work, BAE was utilized exclusively in EDMR measurements. Although BAE EDMR improves the sensitivity of EDMR in studies of semiconductor/oxide interface defects, an understanding of BAE in both electrical measurements and EDMR has not yet been investigated. In this work, we develop a BAE theory based on a modified Fitzgerald-Grove surface recombination methodology, which, in theory, may be utilized to fine-tune conditions for EDMR measurements. BAE may also now be utilized as an analysis tool in purely "electronic" measurements. The model presented here may ultimately prove useful in the development of resonance-based theories of BAE EDMR. Published by AIP Publishing.

引用

页数：10

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