Low-Frequency Noise Characteristics in Multilayer MoTe2 FETs With Hydrophobic Amorphous Fluoropolymers

被引：14
|
作者：
Seo, Seung Gi [1 ]
Hong, Jong Hun [1 ]
Ryu, Jae Hyeon [1 ]
Jin, Sung Hun [1 ]
机构：
[1] Incheon Natl Univ, Dept Elect Engn, Incheon 406772, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
MoTe2; FETs; 1/f noise; CYTOP; 1/F NOISE; TRANSISTORS; MOBILITY; MOS2;
D O I：
10.1109/LED.2018.2889904
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter investigates the low-frequency noise (LFN) properties of the multilayer MoTe2 field-effect transistors (FETs) before and after hydrophobic amorphous polymer (CYTOP) encapsulation in the subthreshold and linear regimes. The noise spectrum density of drain current (S-ID) shows that the LFN in the multilayer MoTe2 FETs nicely fits to a 1/f(gamma) power law with gamma similar to 1 in the frequency range of 10-200 Hz. From the dependence of S-ID on the drain current, carrier number fluctuation (Delta n) is considered as a dominant LFN mechanism from all operation regimes in the multilayer MoTe2 FETs. Extracted trap density (N-t) based on the McWhorter model in this letter was reduced at least more than one order level compared with the multilayer MoTe2 FETs without CYTOP passivation.
引用
收藏
页码：251 / 254
页数：4
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