Energy level alignments at tris(8-hydroquinoline) aluminum/8-hydroquinolatolithium/aluminum interfaces

被引：16

作者：

Cho, Kwanghee ^{[1
]}

Cho, Sang Wan ^{[1
]}

Jeon, Pyung Eun ^{[1
]}

Lee, Hyunbok ^{[1
]}

Whang, Chung-Nam ^{[1
]}

Jeong, Kwangho ^{[1
]}

Kang, Seong Jun ^{[2
]}

Yi, Yeonjin ^{[2
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Korea Res Inst Stand & Sci, Div Adv Technol, Taejon 305340, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2890163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structures of tris(8-hydroquinoline) aluminum (Alq(3))/8-hydroquinolatolithium (Liq)/Al interfaces were studied using in situ ultraviolet and x-ray photoelectron spectroscopy. We constructed complete energy level diagrams and analyzed chemical interactions at the interface. When Liq was inserted between Al and Alq(3), the electron injection barrier was reduced by 0.56 eV compared to the structure without Liq. Additionally, a gap state was observed in the gap of Liq, which is related to an interfacial reaction. The N 1s spectra revealed that there were destructive chemical reactions between Alq(3) and Al, which could be prevented by inserting Liq between them. (c) 2008 American Institute of Physics.

引用

页数：3

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