Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer

被引：7

作者：

Matsubara, Y ^{[1
]}

Endo, K ^{[1
]}

Iguchi, M ^{[1
]}

Ito, N ^{[1
]}

Aoyama, K ^{[1
]}

Tatsumi, T ^{[1
]}

Horiuchi, T ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Sagamihara, Kanagawa 229, Japan

来源：

LOW-DIELECTRIC CONSTANT MATERIALS IV | 1998年 / 511卷

关键词：

D O I：

10.1557/PROC-511-291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new interconnect technique using a low-k (epsilon(r)=2.5) organic interlayer (fluorinated amorphous carbon: a-C:F) and a low-resistivity metal line (copper). The new technique attains a duction in both the capacitance of the interlayer and the resistance of the metal line. We found that a-C:F on Cu reduces reflection to 10% for Kr-F line lithography. However, a-C:F cannot act as a protection layer for oxidation even at 200 degrees C in atmospheric ambient annealing. Cu diffusion into a-C:F is about 100 nm at the annealing temperature of 450 degrees C. The resistivity of the Cu line is 2.3-2.4 mu Omega . cm for the 0.5-mu m line width. Although the leakage current of the a-C:F ILD is one order higher than that of the SiO2 ILD, electrical isolation is acceptable at < 20 V when annealing is carried out at 350 degrees C in a vacuum.

引用

页码：291 / 296

页数：6