A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy
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Haldar, S.
[1
,2
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Banerjee, A.
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UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, IndiaRaja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
Banerjee, A.
[3
]
Vashisht, Geetanjali
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Raja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
Homi Bhabha Natl Inst, Training Sch Complex, Bombay 400094, Maharashtra, IndiaRaja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
Vashisht, Geetanjali
[1
,2
]
Porwal, S.
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Raja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, IndiaRaja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
Porwal, S.
[1
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Sharma, T. K.
[1
,2
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Dixit, V. K.
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Raja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
Homi Bhabha Natl Inst, Training Sch Complex, Bombay 400094, Maharashtra, IndiaRaja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
Dixit, V. K.
[1
,2
]
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[1] Raja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
[2] Homi Bhabha Natl Inst, Training Sch Complex, Bombay 400094, Maharashtra, India
[3] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India
Opto-electronic properties of excitons under parallel and perpendicular magnetic field are investigated on various thickness of GaAs/AlGaAs quantum well. An analytical expression of diamagnetic energy under a parallel magnetic field is derived by solving the Schrodinger equation of exciton in quantum wells. The transformation underlying the solution of Schrodinger equation suggests that an in-plane separation between electron and hole may increase with an increasing parallel magnetic field, leading to a reduced coulomb interaction and slow radiative recombination rate. As a consequence of this, even in the absence of an external electrical bias, parallel magnetic field induces a chiral charge transportation across the hetero-interfaces of a quantum well, which gives rise to an increasing in-plane magneto-photovoltage signal. The present investigation provides a unique method to control the recombination and transportation of charges by the strength and orientation of a magnetic field.
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Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
El-Bakkari, K.
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Sali, A.
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Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Sali, A.
;
Iqraoun, E.
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Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Iqraoun, E.
;
Rezzouk, A.
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Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Rezzouk, A.
;
Es-Sbai, N.
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Sidi Mohammed Ben Abdellah Univ, Fac Sci & Tech, BP 2202,Route Imouzzer, Fes, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Es-Sbai, N.
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Jamil, M. Ouazzani
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Univ Privee Fes, Route Ain Chkef, Fes 30000, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
机构:
Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
El-Bakkari, K.
;
Sali, A.
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Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Sali, A.
;
Iqraoun, E.
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Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Iqraoun, E.
;
Rezzouk, A.
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Sidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Rezzouk, A.
;
Es-Sbai, N.
论文数: 0引用数: 0
h-index: 0
机构:
Sidi Mohammed Ben Abdellah Univ, Fac Sci & Tech, BP 2202,Route Imouzzer, Fes, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco
Es-Sbai, N.
;
Jamil, M. Ouazzani
论文数: 0引用数: 0
h-index: 0
机构:
Univ Privee Fes, Route Ain Chkef, Fes 30000, MoroccoSidi Mohamed Ben Abdellah Univ, Dept Phys, Fac Sci, BP 1796, Dhar El Mahraz, Fez, Morocco